Semiconductor devices
Active in the technical committee
Chairman: VANOOST, Dries
Technical Officer:
Delens, Marc
Technical committee
CEB-BEC 47
Scope
To prepare standards for the design, manufacture, use and reuse of discrete semiconductor devices, integrated circuits, display devices, sensors, electronic component assemblies, interface requirements, and microelectromechanical devices, using environmentally sound practices.
The most recent standards
- IEC 63275-2:2022 - Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
- IEC 60749-10:2022 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - device and subassembly
- IEC 60747-5-4:2022 - Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
- IEC 63284:2022 - Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
- IEC 63275-1:2022 - Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
- IEC 60747-5-14:2022 - Semiconductor devices - Part 5-14: Optoelectronic devices - Light emitting diodes - Test method of the surface temperature based on the thermoreflectance method
- IEC 60749-28:2022 - Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
- IEC 60749-28:2022 RLV - Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
- IEC 62228-7:2022 - Integrated circuits - EMC evaluation of transceivers - Part 7: CXPI transceivers
- IEC 63373:2022 - Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices