Semiconductor devices
Active in the technical committee
Chairman: VANOOST, Dries
Technical Officer:
Rummens, François
Technical committee
CEB-BEC 47
Scope
To prepare standards for the design, manufacture, use and reuse of discrete semiconductor devices, integrated circuits, display devices, sensors, electronic component assemblies, interface requirements, and microelectromechanical devices, using environmentally sound practices.
The most recent standards
- IEC 62047-48:2024 - Semiconductor devices - Micro-electromechanical devices - Part 48: Test method for determining solution concentration by optical absorption using MEMS fluidic device
- IEC 62047-43:2024 - Semiconductor devices - Micro-electromechanical devices - Part 43: Test method of electrical characteristics after cyclic bending deformation for flexible micro-electromechanical devices
- IEC 62047-44:2024 - Semiconductor devices - Micro-electromechanical devices - Part 44: Test methods for dynamic performances of MEMS resonant electric-field-sensitive devices
- IEC 60749-5:2023 - Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
- IEC 60749-5:2023 RLV - Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
- IEC 62228-3:2019/COR1:2023 - Corrigendum 1 - Integrated circuits - EMC evaluation of transceivers - Part 3: CAN transceivers
- IEC 61967-8:2023 - Integrated circuits - Measurement of electromagnetic emissions - Part 8: Measurement of radiated emissions - IC stripline method
- IEC 61967-8:2023 RLV - Integrated circuits - Measurement of electromagnetic emissions - Part 8: Measurement of radiated emissions - IC stripline method
- IEC 63287-2:2023 - Semiconductor devices - Guidelines for reliability qualification plans - Part 2: Concept of mission profile
- IEC 60747-5-16:2023 - Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy